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NDT4N65 - N-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) D G S       72             8QLW PP       .8                 PD[             .
  • $7(  '5$,1  6285&( Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drai.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) MOSFET Ƶ Features ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) D G S       72             8QLW PP       .