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NDT4N70 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 700V.
  • ID = 4.2 A (VGS = 10V).
  • RDS(ON) ＜ 2.15Ω (VGS = 10V) 2.Drain 1.Gate 3.Source + 9.70 0.2 -0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 Unit: mm 2.30+ 0.1 - 0.1 0.50 +0.8 -0.7 + 0.15 1 .5 0 -0.15 + 0.1 5 5 .5 5 -0.15 + 0.15 0 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 1.50 0.28 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continu.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel Enhancement MOSFET NDT4N70 MOSFET ■ Features ● VDS (V) = 700V ● ID = 4.2 A (VGS = 10V) ● RDS(ON) ＜ 2.15Ω (VGS = 10V) 2.Drain 1.Gate 3.Source + 9.70 0.2 -0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 Unit: mm 2.30+ 0.1 - 0.1 0.50 +0.8 -0.7 + 0.15 1 .5 0 -0.15 + 0.1 5 5 .5 5 -0.15 + 0.15 0 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 1.50 0.28 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 + 2.65 0.25 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note1) Avalanche Current (Note1) Repetitive Pulse Avalanche Energy (Note1) Single Pulse Avalanche Energy (Note2) Peak Diode Recovery dv/dt (Note3) Power Dissipation Thermal Resistance.