Datasheet Details
| Part number | CGHV35120F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 532.15 KB |
| Description | GaN HEMT |
| Datasheet | CGHV35120F-MACOM.pdf |
|
|
Overview: CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar.
| Part number | CGHV35120F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 532.15 KB |
| Description | GaN HEMT |
| Datasheet | CGHV35120F-MACOM.pdf |
|
|
|
The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PN: 440162 Package Type: CGHV35120F Typical Performance 3.1 - 3.5 GHz (TC = 85ºC) Parameter 3.1 GHz 3.2 GHz Output Power 142 135 Gain 13 12.8 Drain Efficiency 68 66 3.3 GHz 132 12.8 63 3.4 GHz 136 12.9 62 3.5 GHz 134 12.8 62 Note: Measured in the CGHV35120F-AMP1 application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 38.5 dBm Units W dBc %
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