CGHV35120F
CGHV35120F is GaN HEMT manufactured by MACOM Technology Solutions.
120 W, 2.9
- 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems
Description
The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9
- 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
PN: 440162 Package Type: CGHV35120F
Typical Performance 3.1
- 3.5 GHz (TC = 85ºC)
Parameter
3.1 GHz
3.2 GHz
Output Power
Gain
Drain Efficiency
3.3 GHz 132 12.8 63
3.4 GHz 136 12.9 62
3.5 GHz 134 12.8 62
Note: Measured in the CGHV35120F-AMP1 application...
