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CGHV35120F - GaN HEMT

General Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.

Key Features

  • Rated Power = 120 W @ TCASE = 85°C.
  • Operating Frequency = 2.9 - 3.8 GHz.
  • Transient 100 μsec - 300 μsec @ 20% Duty Cycle.
  • 13 dB Power Gain @ TCASE = 85°C.
  • 62% Typical Drain Efficiency @ TCASE = 85°C.
  • Input Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical Performance 3.1 - 3.5 GHz (TC = 85ºC) Parameter 3.1 GHz 3.2 GHz Output Power 142 135 Gain 13 12.8 Drain Efficiency 68 66 3.3 GHz 132 12.8 63 3.4 GHz 136 12.9 62 3.5 GHz 134 12.8 62 Note: Measured in the CGHV35120F-AMP1 application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 38.