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CGHV40200PP - GaN HEMT

General Description

The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 3.0 GHz Operation.
  • 21 dB Small Signal Gain at 1.8 GHz.
  • 250 W typical PSAT.
  • 67% Efficiency at PSAT.
  • 50 V Operation Package Type: 440199 PN: CGHV40200PP.

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CGHV40200PP 200 W, 50 V, GaN HEMT Description The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Features • Up to 3.0 GHz Operation • 21 dB Small Signal Gain at 1.