CGHV40200PP Description
The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and pressed amplifier circuits.
CGHV40200PP Key Features
- Up to 3.0 GHz Operation
- 21 dB Small Signal Gain at 1.8 GHz
- 250 W typical PSAT
- 67% Efficiency at PSAT
- 50 V Operation
CGHV40200PP Applications
- Up to 3.0 GHz Operation