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MSR2N2222AUB - Rad Hard NPN Silicon Switching Transistor

General Description

This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications.

This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

Key Features

  • JEDEC registered 2N2222A.
  • TID level screened per MIL-PRF-19500.
  • Also available with ELDRS testing to 0.01 Rad(s)/ sec.
  • MKCR/MHCR chip die available.
  • RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate Screened Levels: MSR UB & UBC Package Also available in: TO-206AA (TO-18) package (leaded top-hat) MSR2N2222A(L).

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Full PDF Text Transcription for MSR2N2222AUB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MSR2N2222AUB. For precise diagrams, and layout, please refer to the original PDF.

MSR2N2222AUB / UBC Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2222AUB 100 Kr...

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Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://www.microsemi.com.

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