MSR2N2222AUB
MSR2N2222AUB is Rad Hard NPN Silicon Switching Transistor manufactured by Microsemi.
DESCRIPTION
This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully pliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects
Important: For the latest information, visit our website http://.microsemi..
FEATURES
- JEDEC registered 2N2222A
- TID level screened per MIL-PRF-19500
- Also available with ELDRS testing to 0.01 Rad(s)/ sec
- MKCR/MHCR chip die available
- RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate
Screened Levels: MSR
UB & UBC Package
Also available in:
TO-206AA (TO-18) package
(leaded top-hat) MSR2N2222A(L)
APPLICATIONS / BENEFITS
- Rad-Hard power supplies
- Rad-Hard motor controls
- General purpose switching
- Instrumentation Amps
- EPS Satellite switching power applications
MAXIMUM RATINGS
UA package
(surface mount)
MSR2N2222AUA
Parameters/Test Conditions Junction and Storage Temperature
Thermal Resistance Junction-to-Solder Pad (Infinite Sink)
(see Figure 4)
Thermal Resistance Junction-to-Ambient (see Figure 3) (1)
Total Power Dissipation: (see Figures 1 and 2)
@ TA = +25 ºC @ TSP(IS) = +25 ºC
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Solder Temperature @ 10 s
Symbol TJ and TSTG
RӨJSP(IS)
RӨJA PT
VCBO VEBO VCEO
IC...
