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MSR2N2369AUBC - Rad Hard NPN Silicon High Speed Switching Transistor

Download the MSR2N2369AUBC datasheet PDF. This datasheet also covers the MSR2N2369AUB variant, as both devices belong to the same rad hard npn silicon high speed switching transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MSR2N2369AUB-Microsemi.pdf) that lists specifications for multiple related part numbers.

General Description

This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications.

This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

Overview

  MSR2N2369AUB / UBC   Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Screened Levels: MSR Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2369AUB 100 Krad 100.

Key Features

  • JEDEC registered 2N2369.
  • TID level screened per MIL-PRF-19500.
  • Also available with ELDRS testing to 0.01 Rad(s)/ sec.
  • MKCR / MHCR chip die available.
  • RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec d.