MSR2N2907AUB Datasheet | Microsemi

DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully pliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://.microsemi.. FEATURES - JEDEC registered 2N2907A - TID level screened per MIL-PRF-19500 - Also available with ELDRS testing to 0.01 Rad(s)/ sec - MKCR/MHCR chip die available - RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate APPLICATIONS / BENEFITS - Rad-Hard power supplies - Rad-Hard motor controls - General purpose switching - Instrumentation Amps - EPS Satellite switching power applications MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Solder Pad (Infinite Sink) (see Figure 2) Thermal Resistance Junction-to-Ambient (see Figure 3) (1) Total Power Dissipation: @ TA = +25 ºC (1) (see Figure 1) @ TSP(IS) = +25 ºC Collector-Base Voltage, Emitter Open Emitter-Base Voltage, Collector Open Collector-Emitter Voltage, Base Open Collector Current, dc Solder Temperature @ 10 s Symbol TJ and TSTG RӨJSP(IS) RӨJA PT VCBO VEBO VCEO IC TSP Value -65 to +200 325 0.5 1.0 -60 -5 -60 -600 260 Unit ºC ºC/W ºC/W W V V V m A o...