MSR2N2907AUBC - Rad Hard PNP Silicon Switching Transistor
Microsemi (now Microchip Technology)
Download the MSR2N2907AUBC datasheet PDF.
This datasheet also covers the MSR2N2907AUB variant, as both devices belong to the same rad hard pnp silicon switching transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications.
This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.
Key Features
JEDEC registered 2N2907A.
TID level screened per MIL-PRF-19500.
Also available with ELDRS testing to 0.01 Rad(s)/ sec.
MKCR/MHCR chip die available.
RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate.
Full PDF Text Transcription for MSR2N2907AUBC (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MSR2N2907AUBC. For precise diagrams, and layout, please refer to the original PDF.
MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2907AUB 100 Kr...
View more extracted text
Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://www.microsemi.com.
More Datasheets from Microsemi (now Microchip Technology)
MSR2N2907AUBC Datasheet
