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MSR2N2907AUBC - Rad Hard PNP Silicon Switching Transistor

This page provides the datasheet information for the MSR2N2907AUBC, a member of the MSR2N2907AUB Rad Hard PNP Silicon Switching Transistor family.

Description

This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications.

This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

Features

  • JEDEC registered 2N2907A.
  • TID level screened per MIL-PRF-19500.
  • Also available with ELDRS testing to 0.01 Rad(s)/ sec.
  • MKCR/MHCR chip die available.
  • RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate.

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Datasheet preview – MSR2N2907AUBC

Datasheet Details

Part number MSR2N2907AUBC
Manufacturer Microsemi
File Size 434.67 KB
Description Rad Hard PNP Silicon Switching Transistor
Datasheet download datasheet MSR2N2907AUBC Datasheet
Additional preview pages of the MSR2N2907AUBC datasheet.

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Full PDF Text Transcription

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://www.microsemi.com.
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