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MSR2N2369AUB - Rad Hard NPN Silicon High Speed Switching Transistor

Description

This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications.

This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

Features

  • JEDEC registered 2N2369.
  • TID level screened per MIL-PRF-19500.
  • Also available with ELDRS testing to 0.01 Rad(s)/ sec.
  • MKCR / MHCR chip die available.
  • RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec d.

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Datasheet preview – MSR2N2369AUB

Datasheet Details

Part number MSR2N2369AUB
Manufacturer Microsemi
File Size 517.37 KB
Description Rad Hard NPN Silicon High Speed Switching Transistor
Datasheet download datasheet MSR2N2369AUB Datasheet
Additional preview pages of the MSR2N2369AUB datasheet.

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Full PDF Text Transcription

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  MSR2N2369AUB / UBC   Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Screened Levels: MSR Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects Important: For the latest information, visit our website http://www.microsemi.com.
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