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MJE18009 - POWER TRANSISTORS

Key Features

  • Improved Efficiency Due to Low Base Drive Requirements:.
  • High and Flat DC Current Gain hFE.
  • Fast Switching.
  • No Coil Required in Base Circuit for Turn.
  • Off (No Current Tail).
  • Full Characterization at 125_C.
  • Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric Distributions.
  • Specified Dynamic Saturation Data.
  • Two Package Choices: Standard TO.
  • 220 or Isolated TO.
  • 220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18009/D ™ Data Sheet SWITCHMODE™ NPN Designer's Silicon Planar Power Transistor MJE18009 MJF18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light ballast”).