MMDF3N06HD - Dual MOSFET

Features

h the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specif.

Motorola

Datasheet Details

Part number	MMDF3N06HD
Manufacturer	Motorola
File Size	213.66 KB
Description	Dual MOSFET
Datasheet	MMDF3N06HD Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N06HD/D Advance Information Medium Power Surface Mount Products MMDF3N06HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.

Published: May 9, 2005 |