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MMDF3N06VL - Power MOSFET

Key Features

  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FETt Predecessors.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.
  • Miniature SO.
  • 8 Surface Mount Package.
  • Saves Board Space.
  • Mounting Information for SO.

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Full PDF Text Transcription for MMDF3N06VL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMDF3N06VL. For precise diagrams, and layout, please refer to the original PDF.

MMDF3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor co...

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witching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

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