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MMDF3N02HD - Power MOSFET

Features

  • bbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VGS = 0 V TJ = 25°C GATE-TO-SOURCE OR DRAIN-TO-SOURCE.

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Datasheet Details

Part number MMDF3N02HD
Manufacturer ON Semiconductor
File Size 153.88 KB
Description Power MOSFET
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www.DataSheet4U.com MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
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