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MRF286 - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

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Description

MOTOROLA RF DEVICE DATA MRF286 MRF286S 3 www.DataSheet4U.com C3 C4 R1 W1 R2 W2 R3 C8 C5 C7 R4 B1 C13 C12 R6 W3 R5 B2 C15 L2 C16 C17 C1 C2 C10 C9 C14 R7 W4 C18 C19 L3 L4 WS1 WS2 L1 C6 C11 MRF286/S Rev

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Figure 2.

2.0 GHz Broadband Test Circuit Component La

Features

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Datasheet Details

Part number MRF286
Manufacturer Motorola
File Size 234.49 KB
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9.5 dB Intermodulation Distortion — –28 dBc • Typical Two–Tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10.
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