The Rf Sub-micron MOSFET Line Rf Power Field Effect Transistors
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF286S |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 234.49 KB |
| Description | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
| Datasheet | MRF286S MRF286 Datasheet (PDF) |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN PCS/cellular radio and WLL...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF286 | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
| MRF281SR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF281ZR1 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF282S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282Z | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF284 | RF Power Field-Effect Transistors |
| MRF284S | RF Power Field-Effect Transistors |
| MRF20030 | RF POWER TRANSISTOR |
| MRF20060 | RF Power Bipolar Transistors |
| MRF20060R | RF POWER BIPOLAR TRANSISTOR |
