NCE30NP07S Datasheet | NCE Power Semiconductor

Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel - N-Channel VDS = 30V,ID =6.5A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 37mΩ @ VGS=4.5V - P-Channel Only Schematic diagram VDS = -30V,ID = -7A RDS(ON) < 32mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V Use - High power and current handing capability - Lead free product is acquired - Surface mount package times Marking and pin assignment gsheng Package Marking and Ordering Information n Device Marking Device Device Package To NCE30NP07S NCE30NP07S SOP-8 Reel Size Ø330mm SOP-8 top view Tape width 12mm Quantity 4000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) r Parameter Symbol N-Channel Fo Drain-Source Voltage P-Channel -30 Unit Gate-Source Voltage ±20 ±20 Continuous Drain...