NCE30NP4030G Datasheet | NCE Power Semiconductor

Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel - VDS = 30V,ID = 40A P-channel - VDS = -30V,ID =- 30A RDS(ON) <9.5mΩ @ VGS=10V RDS(ON) <11mΩ @ VGS=-10V RDS(ON) <23mΩ @ VGS=4.5V RDS(ON) <20mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired - Surface mount package Application - H-bridge - Inverters Schematic diagram Pin assignment DFN5X6-8L Bottom View Package Marking and Ordering Information Device Marking Device Device Package 30NP4030G DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC=25℃ Continuous Drain Current TC=100℃ Pulsed Drain Current (Note 1) Maximum Power...