Datasheet Details
| Part number | NCE6990 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 395.36 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE6990 Datasheet
|
|
|
General Description
The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =69V,ID =90A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.