NCE6990D Datasheet PDF (N-Channel Enhancement Mode Power MOSFET) | Download NCE Power Semiconductor NCE6990D

NCE6990D - N-Channel Enhancement Mode Power MOSFET

Description

The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:6.2mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

Datasheet Details

Part number	NCE6990D
Manufacturer	NCE Power Semiconductor
File Size	438.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6990D Datasheet
Additional preview pages of the NCE6990D datasheet.

📁 Similar Datasheet

NCE6003 - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6005AS - Dual N-Channel MOSFET (VBsemi)

NCE6005R - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6005S - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6005S - Dual N-Channel MOSFET (VBsemi)

NCE6008AS - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6012AS - N-Channel 60V MOSFET (VBsemi)

NCE6020I - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6020K - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE6020L - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE6990D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V (Typ:6.

Published: Jun 2, 2018 |