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UPA1709 - N-Channel Power MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.

Key Features

  • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP. ) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP. ) (VGS = 4.5 V, ID = 4.5 A).
  • Low Ciss : Ciss = 1850 pF (TYP. ).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8).

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More Datasheets from NEC (now Renesas Electronics)

Part Number Description
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Full PDF Text Transcription for UPA1709 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA1709. For precise diagrams, tables, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designe...

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CRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 Max. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.44 0.15 0.05 Min. µ PA1709G 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. +0.10 –0.05 0.