UPA1756
Description
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook puters, and Li-ion battery application.
Key Features
- Dual MOS FET chips in small package
- 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
- Low Ciss Ciss = 800 pF TYP
- Built-in G-S protection diode
