Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1759
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10
- 0.05
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.
Features
- Dual chip type
- Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 Max.
6.0 ±0.3 4.4 0.8
- Low input capacitance Ciss = 190 pF TYP.
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12...