UPA1759
Overview
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.
- Dual chip type
- Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A)
- 44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
- 8 Max.
- 0 ±0.3 4.4 0.8
- Low input capacitance Ciss = 190 pF TYP.
- 05 Min.
- 5 ±0.2 0.10
