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UPA1755 - N-Channel Power MOSFET

General Description

This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Key Features

  • Dual chip type.
  • Low on-resistance 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A).
  • Low input capacitance Ciss = 895 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8 RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
uPA1754 N-Channel Power MOSFET
UPA1756 N-Channel Power MOSFET
UPA1757 N-Channel Power MOSFET
UPA1758 N-Channel Power MOSFET
UPA1759 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 895 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8 RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.