Description
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
Features
- Dual chip type.
- Low on-resistance
1.44
RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A).
- Low input capacitance Ciss = 895 pF TYP.
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
1.8 Max. 6.0 ±0.3 4.4 0.8
RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
0.15
0.05 Min. 0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M.
UPA1755 Datasheet
