Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1755
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10
- 0.05
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
Features
- Dual chip type
- Low on-resistance
RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A)
- Low input capacitance Ciss = 895 pF TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
1.8 Max.
6.0 ±0.3 4.4 0.8
RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5...