Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1758
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook puters, and Li-ion battery application.
Features
- Dual MOS FET chips in small package
- 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A)
- Low Ciss : Ciss = 1100 pF (TYP.)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37...