uPA1754
Description
This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications and power management applications of notebook puters.
Key Features
- Dual chip type
- Low on-resistance RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4 V, ID = 3.5 A)
- Low input capacitance Ciss = 780 pF TYP
- Built-in G-S protection diode
