UPA1757 Description
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook puters, and Li-ion battery application. 8 Package Drawing (Unit.
UPA1757 Key Features
- Dual MOS FET chips in small package
- 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
- Low Ciss
- Small and surface mount package (Power SOP8)
- Built-in G-S protection diode