UPA1757
Overview
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 Package Drawing (Unit : mm) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2.
- Dual MOS FET chips in small package
- 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
- 44 RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
- 8 Max. 1 5.37 Max. 4
- 0 ±0.3 4.4 +0.10 -0.05
- Low Ciss
- 8 Ciss = 750 pF Typ.
- 05 Min.
- Small and surface mount package (Power SOP8)
- Built-in G-S protection diode
