Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1757
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook puters, and Li-ion battery application.
Package Drawing (Unit : mm)
5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2
Features
- Dual MOS FET chips in small package
- 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
1.8 Max.
1 5.37 Max.
6.0 ±0.3 4.4
+0.10
- 0.05
- Low Ciss
Ciss = 750 pF Typ.
0.05 Min.
- Small and...