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UPA2751GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

General Description

The µPA2751GR is asymmetrical dual N-Channel MOS Field Effect Transistor designed for DC/DC converters of notebook computers and so on.

Key Features

  • Asymmetric dual chip type.
  • Low on-state resistance, Low Ciss CH1: RDS(on)2: 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V) CH2: RDS(on)2: 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) Ciss = 480 pF TYP. (VDS = 10 V, VGS = 0 V).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1 4 5.37 Max. +0.10.
  • 0.05 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M.

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Full PDF Text Transcription for UPA2751GR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA2751GR. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2751GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2751GR is asymmetrical dual N-Channel MOS Field Effect Transistor d...

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µPA2751GR is asymmetrical dual N-Channel MOS Field Effect Transistor designed for DC/DC converters of notebook computers and so on. PACKAGE DRAWING (Unit: mm) 8 5 CH2 CH2 CH1 CH1 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 FEATURES • Asymmetric dual chip type • Low on-state resistance, Low Ciss CH1: RDS(on)2: 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V) CH2: RDS(on)2: 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) Ciss = 480 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1 4 5.37 Max. +0.10 –0.05

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