UPA2751GR
DESCRIPTION
The µPA2751GR is asymmetrical dual N-Channel MOS Field Effect Transistor designed for DC/DC converters of notebook puters and so on.
PACKAGE DRAWING (Unit: mm)
8 5
CH2 CH2 CH1 CH1
1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2
FEATURES
- Asymmetric dual chip type
- Low on-state resistance, Low Ciss CH1: RDS(on)2: 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) Ciss = 1040 p F TYP. (VDS = 10 V, VGS = 0 V) CH2: RDS(on)2: 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) Ciss = 480 p F TYP. (VDS = 10 V, VGS = 0 V)
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
4 5.37 Max.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
1.8 Max.
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10
- 0.05
µPA2751GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current...
