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UPA2753GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µPA2753GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.

0.05

Features

  • Dual chip type.
  • Low on-state resistance RDS(on)1 = 21.4 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 36.4 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A).
  • Low Ciss: Ciss = 620 pF TYP.
  • Built-in G - S protection diode.
  • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.
  • 0.05.

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Datasheet Details

Part number UPA2753GR
Manufacturer NEC
File Size 69.25 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2753GR Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2753GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2753GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 21.4 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 36.4 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss: Ciss = 620 pF TYP. • Built-in G - S protection diode • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.
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