• Part: UPA2753GR
  • Description: SWITCHING N- AND P-CHANNEL POWER MOS FET
  • Manufacturer: NEC
  • Size: 69.25 KB
Download UPA2753GR Datasheet PDF
NEC
UPA2753GR
DESCRIPTION The µPA2753GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. PACKAGE DRAWING (Unit: mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 - 0.05 FEATURES - Dual chip type - Low on-state resistance RDS(on)1 = 21.4 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 31.6 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 36.4 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) - Low Ciss: Ciss = 620 p F TYP. - Built-in G - S protection diode - Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 - 0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA2753GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC)...