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UPA2754GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µPA2754GR is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery protection circuit and power management application.

0.05

Features

  • Dual chip type.
  • Low on-state resistance RDS(on)1 = 14.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) RDS(on)2 = 15.0 mΩ MAX. (VGS = 4.0 V, ID = 5.5 A) RDS(on)4 = 18.6 mΩ MAX. (VGS = 2.5 V, ID = 5.5 A).
  • Low Ciss: Ciss = 1940 pF TYP. (VDS = 10 V, VGS = 0 V).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10.

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Datasheet Details

Part number UPA2754GR
Manufacturer NEC
File Size 74.82 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2754GR Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2754GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2754GR is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery protection circuit and power management application. 8 PACKAGE DRAWING (Unit: mm) 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 14.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) RDS(on)2 = 15.0 mΩ MAX. (VGS = 4.0 V, ID = 5.5 A) RDS(on)4 = 18.6 mΩ MAX. (VGS = 2.5 V, ID = 5.5 A) • Low Ciss: Ciss = 1940 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.
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