UPA2752GR Datasheet PDF - NEC SWITCHING N- AND P-CHANNEL POWER MOS FET Specs

UPA2752GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µPA2752GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

0.05

Features

Dual chip type.
Low on-state resistance RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 41.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A).
Low Ciss: Ciss = 480 pF TYP.
Built-in G-S protection diode.
Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
0.05 0.12 M.

Datasheet Details

Part number	UPA2752GR
Manufacturer	NEC
File Size	81.92 KB
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet	UPA2752GR Datasheet
Additional preview pages of the UPA2752GR datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2752GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2752GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 35.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 41.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss: Ciss = 480 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.

Published: Sep 22, 2005 |