UPA2756GR
DESCRIPTION
The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4
+0.10
- 0.05
FEATURES
- Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
- Low Ciss: Ciss = 260 p F TYP.
- Built-in G-S protection diode against ESD
- Small and surface mount package (Power SOP8)
4 5.37 MAX.
1.8 MAX.
0.05 MIN.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
0.12 M
µ PA2756GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1 Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 ±20 ±4.0 ±16 1.6 2.0 150
- 55 to +150 4.0 1.6 1.6
V V A A W W °C °C A m J m J
Gate 1
EQUIVALENT CIRCUIT
Drain 1 Drain 2
Drain...
