UPA2756GR Description
The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. Drain 2 6.0 ±0.3 4.4 +0.10 0.05.
UPA2756GR Key Features
- Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
- Low Ciss: Ciss = 260 pF TYP
- Built-in G-S protection diode against ESD
- Small and surface mount package (Power SOP8)