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UPA2756GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications.

0.05

Features

  • Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A).
  • Low Ciss: Ciss = 260 pF TYP.
  • Built-in G-S protection diode against ESD.
  • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.05 MIN.

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Datasheet Details

Part number UPA2756GR
Manufacturer NEC
File Size 138.46 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2756GR Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. PACKAGE DRAWING (Unit: mm) 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES • Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) • Low Ciss: Ciss = 260 pF TYP. • Built-in G-S protection diode against ESD • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.05 MIN. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.15 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
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