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UPA2756GR Datasheet

Manufacturer: NEC (now Renesas Electronics)

UPA2756GR datasheet preview

Datasheet Details

Part number	UPA2756GR
Datasheet	UPA2756GR_NEC.pdf
File Size	138.46 KB
Manufacturer	NEC (now Renesas Electronics)
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET

UPA2756GR Overview

The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. Drain 2 6.0 ±0.3 4.4 +0.10 0.05.

UPA2756GR Key Features

Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss: Ciss = 260 pF TYP
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)

More Datasheets from NEC (now Renesas Electronics)

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UPA2701GR	SWITCHING N- AND P-CHANNEL POWER MOS FET
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UPA2756GR Distributor