UPA2755GR Description
The µ PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. Drain 2 6.0 ±0.3 4.4 +0.10 0.05.
UPA2755GR Key Features
- Dual chip type
- Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
- Low Ciss: Ciss = 650 pF TYP
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)