Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2755GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4
+0.10 –0.05
FEATURES
• Dual chip type • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Low Ciss: Ciss = 650 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.
UPA2755GR Datasheet
