UPA2755GR
DESCRIPTION
The µ PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4
+0.10
- 0.05
FEATURES
- Dual chip type
- Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
- Low Ciss: Ciss = 650 p F TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
4 5.37 MAX.
1.8 MAX.
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
µ PA2755GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±8.0 ±32 1.7...
