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PE6R8DX - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the PE6R8DX datasheet PDF. This datasheet also covers the PE6R8DX-NIKO variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE6R8DX-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE6R8DX
Manufacturer NIKO-SEM
File Size 324.73 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PE6R8DX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM Dual N-Channel Enhancement Mode PE6R8DX Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 15.5mΩ ID 24A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Protable Devices for Battery PACK Applications.