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PE6W2EA - N-Channel Field Effect Transistor

Download the PE6W2EA datasheet PDF. This datasheet also covers the PE6W2EA-NIKO variant, as both devices belong to the same n-channel field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV. ESD Protected Gate D D DD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE6W2EA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE6W2EA
Manufacturer NIKO-SEM
File Size 364.41 KB
Description N-Channel Field Effect Transistor
Datasheet download datasheet PE6W2EA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ N-Channel Enhancement Mode Field Effect Transistor PE6W2EA PDFN 3x3P Halogen-Free & Lead-Free ID 24A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected up to 2KV. ESD Protected Gate D D DD Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. #1 S S S G G. GATE D. DRAIN S.