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BF998WR Datasheet N-channel Dual-gate Mos-fet

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification.

General Description

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected.

The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

CAUTION The device is supplied in an antistatic package.

Key Features

  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.

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