NXP Semiconductors BF998WR
The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF998WR |
|---|---|
| Datasheet | BF998WR Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel dual-gate MOS-FET |
| Buy | Stock & Price |
FEATURES
● High forward transfer admittance● Short channel transistor with high forward transfer admittance to input capacitance ratio
● Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
● VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.DESCRIPTION
Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. CAUTION The device is supplied in an antistatic package. Marking code: MB. BF998WR PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1DESCRIPTION
d 3 4 g2 g1 2 1 s,b Top view MAM198 Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − − − − − MIN. − − − − 24 2.1 25 1 TYP.
