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BFG21W - UHF power transistor

General Description

NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.

Marking code: P1.

Key Features

  • High power gain.
  • High efficiency.
  • 1.9 GHz operating area.
  • Linear and non-linear operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power transistor FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. • Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. 2 Top view 1 MSB842 BFG21W PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter handbook, halfpage 3 4 Marking code: P1. Fig.