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BFG21W Datasheet Uhf Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power.

General Description

NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.

2 Top view 1 MSB842 BFG21W PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter handbook, halfpage 3 4 Marking code: P1.

Fig.1 Simplified outline SOT343R.

Key Features

  • High power gain.
  • High efficiency.
  • 1.9 GHz operating area.
  • Linear and non-linear operation.

BFG21W Distributor