BFG21W Description
NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. 2 Top view 1 MSB842 BFG21W PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter handbook, halfpage 3 4 Marking code: Fig.1 Simplified outline SOT343R.
BFG21W Key Features
- High power gain
- High efficiency
- 1.9 GHz operating area
- Linear and non-linear operation
BFG21W Applications
- mon emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc