BFG25X Overview
NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; Tamb = 25 °C IC = 0.5 mA;.
BFG25X Key Features
- Low current consumption (100 µA to 1 mA)
- Low noise figure
- Gold metallization ensures excellent reliability