NXP Semiconductors BFG25X
NPN 5 GHz wideband transistor
| Part No. | BFG25X |
|---|---|
| Datasheet | BFG25X Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current consumption (100 µA to 1 mA)● Low noise figure
● Gold metallization ensures excellent reliability.
APPLICATIONS
● RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.DESCRIPTION
NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4DESCRIPTION
collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP.
