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BFG25X - NPN 5 GHz wideband transistor

Download the BFG25X datasheet PDF. This datasheet also covers the BFG25A variant, as both devices belong to the same npn 5 ghz wideband transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

Marking code: V11.

Fig.1 SOT143B.

Key Features

  • Low current consumption (100 µA to 1 mA).
  • Low noise figure.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFG25A-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BFG25A NPN 5 GHz wideband transistor
BFG25AW NPN 5 GHz wideband transistors
BFG21W UHF power transistor
BFG10 NPN 2 GHz RF power transistor
BFG10W UHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B.