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BFG25AW - NPN 5 GHz wideband transistors

General Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

Key Features

  • Low current consumption (100 µA to 1 mA).
  • Low noise figure.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistors FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.