BFG25AW Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure Ts ≤ 85 °C IC = 0.5 mA; f = 1 MHz open emitter open base...
BFG25AW Key Features
- Low current consumption (100 µA to 1 mA)
- Low noise figure
- Gold metallization ensures excellent reliability