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BFG25A - NPN 5 GHz wideband transistor

General Description

NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).

Marking code: V11.

Fig.1 SOT143B.

Key Features

  • Low current consumption (100 µA to 1 mA).
  • Low noise figure.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B.