BFG403W Description
handbook, halfpage 3 4 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance...
BFG403W Key Features
- Low current
- Very high power gain
- Low noise figure
- High transition frequency
- Very low feedback capacitance