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BFG403W - NPN 17 GHz wideband transistor

General Description

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

Marking code: P3.

Fig.1 Simplified outline SOT343R.

Key Features

  • Low current.
  • Very high power gain.
  • Low noise figure.
  • High transition frequency.
  • Very low feedback capacitance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS • Pager front ends • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors.