NXP Semiconductors BFG403W
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.| Part No. | BFG403W |
|---|---|
| Datasheet | BFG403W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 17 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current● Very high power gain
● Low noise figure
● High transition frequency
● Very low feedback capacitance.
APPLICATIONS
● Pager front ends● RF front end
● Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
● Radar detectors. 2 1 MSB842 BFG403W PINNING PIN 1 2 3 4 emitter base emitter collector
DESCRIPTION
handbook, halfpage 3 4DESCRIPTION
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Top view Marking code: P3. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure Ts ≤ 140 °C IC = 3 mA; VCE = 2 V; Tj = 25 °C IC = 0; VCB = 2 V; f = 1 MHz open emitter open base CONDITIONS MIN. − − − − 50 − TYP. − − 3 − 80 20 17 22 1 MAX.
