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BFG480W Datasheet NPN Wideband Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 Philips Semiconductors Product specification NPN wideband.

General Description

3 4 APPLICATIONS • RF front end with high linearity system demands (CDMA) • mon emitter class AB driver.

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.

QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Gmax F Gp ηC PARAMETER collector-emitter voltage open base collector current (DC) total power dissipation transition frequency maximum gain noise figure power gain collector efficiency Ts ≤ 60 °C CONDITIONS − 80 − IC = 80 mA;

Key Features

  • High power gain.
  • High efficiency.
  • Low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.
  • Linear and non-linear operation. handbook, halfpage BFG480W.

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