BFG480W Description
3 4 APPLICATIONS RF front end with high linearity system demands (CDMA) mon emitter class AB driver. DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Gmax F Gp ηC PARAMETER collector-emitter voltage open base collector current (DC) total power dissipation transition...
BFG480W Key Features
- High power gain
- High efficiency
- Low noise figure
- High transition frequency
- Emitter is thermal lead
- Low feedback capacitance
- Linear and non-linear operation
BFG480W Applications
- RF front end with high linearity system demands (CDMA)