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BFG480W - NPN wideband transistor

General Description

3 4 APPLICATIONS RF front end with high linearity system demands (CDMA)

Common emitter class AB driver.

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.

Key Features

  • High power gain.
  • High efficiency.
  • Low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.
  • Linear and non-linear operation. handbook, halfpage BFG480W.

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DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 Philips Semiconductors Product specification NPN wideband transistor FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • Linear and non-linear operation. handbook, halfpage BFG480W PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION 3 4 APPLICATIONS • RF front end with high linearity system demands (CDMA) • Common emitter class AB driver. DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.