NXP Semiconductors BFG480W
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.| Part No. | BFG480W |
|---|---|
| Datasheet | BFG480W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● High efficiency
● Low noise figure
● High transition frequency
● Emitter is thermal lead
● Low feedback capacitance
● Linear and non-linear operation. handbook, halfpage BFG480W PINNING PIN 1 2 3 4 emitter base emitter collector
DESCRIPTION
3 4APPLICATIONS
● RF front end with high linearity system demands (CDMA)● Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Gmax F Gp ηC PARAMETER collector-emitter voltage open base collector current (DC) total power dissipation transition frequency maximum gain noise figure power gain collector efficiency Ts ≤ 60 °C CONDITIONS − 80 − IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C 21 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C 16 IC = 8 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt Pulsed; class-AB; δ < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW Pulsed; class-AB; δ < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW CAUTION 1.8 13.5 45 TYP.
