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BFG410W - NPN 22 GHz wideband transistor

General Description

emitter base emitter collector APPLICATIONS RF front end

Wideband applications, e.g.

Radar detectors Pagers Satellite television tuners (SATV)

High frequency oscillators.

Key Features

  • Very high power gain.
  • Low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors NPN 22 GHz wideband transistor Product specification BFG410W FEATURES  Very high power gain  Low noise figure  High transition frequency  Emitter is thermal lead  Low feedback capacitance. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector APPLICATIONS  RF front end  Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)  Radar detectors  Pagers  Satellite television tuners (SATV)  High frequency oscillators.