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BFQ67 - NPN 8 GHz wideband transistor

General Description

Silicon NPN wideband transistor in a plastic SOT23 package.

Fig.1 SOT23.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment up to 2 GHz. PINNING PIN 1 2 3 base emitter collector Marking code: V2p. BFQ67 DESCRIPTION Silicon NPN wideband transistor in a plastic SOT23 package. alfpage 3 DESCRIPTION 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1.