BFQ67T
Overview
Top view 2 MBK090 Fig.1 SOT416. MAX. 20 10 50 150 - - - - UNIT V V mA mW GHz dB dB MAX. 20 10 2.5 50 150 +150 150 V V V UNIT mA mW °C °C 2000 Mar 06 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL CHARACT.
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
- SOT416 (SC-75) envelope. APPLICATIONS Wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note
- Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note
- Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base MIN. - - - - IC = 15 mA; VCE = 5 V; Tj = 25 °C 60 IC = 15 mA; VCE = 8 V; f = 2 GHz; - Tamb = 25 °C IC = 15 mA; VCE = 8 V; f = 1 GHz; - Tamb = 25 °C IC = 5 mA; VCE = 8 V; f = 1 GHz - TYP. - - - - 100 8 13 1.3 PINNING PIN 1 2 3 base emitter collector Marking code: V2. BFQ67T
