BFQ67W
Overview
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
- SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 15 mA; VCE = 5 V; Tj = 25 °C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C Ic = 5 mA; VCE = 8 V; f = 1 GHz open base CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 100 8 13 1.3 1 2 3 PINNING PIN DESCRIPTION Code: V2 base emitter collector handbook, 2 columns BFQ67W 3 1 Top view 2 MBC870 Fig.1 SOT323. MAX. 20 10 50 300 - - - -
