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BFQ67W Datasheet NPN 8 Ghz Wideband Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband.

General Description

NPN transistor in a plastic SOT323 envelope.

It is designed for wideband applications such as satellite TV tuners and RF portable munications equipment up to 2 GHz.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C;

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.
  • SOT323 envelope.

BFQ67W Distributor