Datasheet4U Logo Datasheet4U.com

BFQ68 - NPN 4 GHz wideband transistor

General Description

NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap.

All leads are isolated from the stud.

Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.

Key Features

  • very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFQ60 LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz Siemens Semiconductor Group
BFQ65 Silicon NPN Planar RF Transistor TEMIC
BFQ65 BFQ65 ETC
BFQ67 Silicon NPN Planar RF Transistor Vishay Telefunken
BFQ67 Silicon NPN wideband transistor TY Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
BFQ621 NPN 7 GHz wideband transistor
BFQ67 NPN 8 GHz wideband transistor
BFQ67T NPN 8 GHz wideband transistor
BFQ67W NPN 8 GHz wideband transistor
BFQ131 NPN video transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product speciļ¬cation File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product speciļ¬cation NPN 4 GHz wideband transistor DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.