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BFT46 - N-channel silicon FET

General Description

Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope.

The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.

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DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. PINNING 1 = drain 2 = source 3 = gate Note : Drain and source are interchangeable. Marking code BFT46 = M3p Fig.1 Simplified outline and symbol, SOT23.