BLF182XR
description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
(V) (W)
50 250
Gp (d B) 28
D (%) 72
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 600 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF182XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF182XRS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]...
