Datasheet4U Logo Datasheet4U.com

BLF182XRS Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF182XR; BLF182XRS Power LDMOS transistor Rev. 1 — 23 July 2015 Objective data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.2

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

BLF182XRS Distributor