BLF183XR
description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
CW 88 to 108 pulsed RF
30 to 512
CW 30 to 512
VDS (V) 50 50 50 35
PL (W) 350 388 400 193
Gp (d B) 28 26 15 14
D (%) 75 80 48 47
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 600 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF183XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF183XRS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to...
